The STP30NM50N is a TO-220 flange mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 190W and a drain to source breakdown voltage of 500V. The device has a continuous drain current of 27A and a drain to source resistance of 90mR. It is lead free and RoHS compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STP30NM50N technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 115mR |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.74nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Rds On Max | 115mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 115ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP30NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STP30NM50N to view detailed technical specifications.
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