N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 148mΩ maximum drain-source on-resistance. This component offers a continuous drain current of 22A and a maximum power dissipation of 150W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C and includes lead-free and RoHS compliance.
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Stmicroelectronics STP31N65M5 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 148mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 148mR |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 816pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 148mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 46ns |
| Width | 4.6mm |
| RoHS | Compliant |
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