N-Channel Power MOSFET with 650V drain-source breakdown voltage and 24A continuous drain current. Features 119mΩ maximum drain-source on-resistance and 150W power dissipation. Operates from -55°C to 150°C, with a 4V threshold voltage. Packaged in a TO-220 through-hole mount, this RoHS compliant component offers fast switching with 16ns fall time and 53ns turn-on/off delay times.
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Stmicroelectronics STP32N65M5 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 119mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 119MR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 3.32nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 119mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 53ns |
| Width | 4.6mm |
| RoHS | Compliant |
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