N-channel Power MOSFET, 600V drain-source breakdown voltage, 26A continuous drain current, and 108mΩ typical drain-source resistance. Features a TO-220-3 through-hole package, 190W maximum power dissipation, and operates from -55°C to 150°C. Includes 9ns fall time, 16ns turn-on delay, and 109ns turn-off delay. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STP33N60M2 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 108mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.781nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 109ns |
| Turn-On Delay Time | 16ns |
| Weight | 0.01164oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP33N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STP33N60M2 to view detailed technical specifications.
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