N-channel MDmesh M6 power MOSFET provides a 600 V drain-source rating and 25 A continuous drain current in a TO-220 package. The device has 105 mΩ typical and 125 mΩ maximum on-resistance at 10 V gate drive, with low intrinsic gate resistance and 33.4 nC typical total gate charge. It is 100% avalanche tested, zener-protected, and intended for switching applications, LLC converters, and boost PFC converters. The operating junction and storage temperature range extends from -55 °C to 150 °C.
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| Transistor polarity | N-channel |
| Drain-source voltage | 600V |
| Continuous drain current at 25 °C | 25A |
| Continuous drain current at 100 °C | 15.8A |
| Pulsed drain current | 78A |
| Maximum on-resistance | 125mΩ |
| Typical on-resistance | 105mΩ |
| Gate-source voltage | ±25V |
| Gate threshold voltage | 3.25 to 4.75V |
| Total power dissipation at 25 °C | 190W |
| Operating junction temperature range | -55 to 150°C |
| Storage temperature range | -55 to 150°C |
| Junction-to-case thermal resistance | 0.66°C/W |
| Junction-to-ambient thermal resistance | 62.5°C/W |
| Input capacitance | 1515pF |
| Output capacitance | 128pF |
| Reverse transfer capacitance | 4.2pF |
| Intrinsic gate resistance | 1.5Ω |
| Total gate charge | 33.4nC |
| Single pulse avalanche energy | 500mJ |
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
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