N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 28A continuous drain current. Offers low 0.09 Ohm typical drain-source on-resistance in a TO-220 package. Designed for through-hole mounting with a maximum power dissipation of 190W and an operating temperature range of -55°C to 150°C. Includes 2.7nF input capacitance and 59ns turn-on/off delay times.
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Stmicroelectronics STP34N65M5 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 110mR |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 2.7nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 59ns |
| Turn-On Delay Time | 59ns |
| Width | 4.6mm |
| RoHS | Compliant |
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