N-channel power MOSFET featuring 550V drain-source breakdown voltage and 33A continuous drain current. Offers a low 80mΩ typical on-resistance and 190W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, this component operates within a -55°C to 150°C temperature range. Includes 2.67nF input capacitance and 56ns turn-on/off delay times. RoHS compliant and lead-free.
Stmicroelectronics STP36N55M5 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 550V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 550V |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 2.67nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 56ns |
| Width | 4.6mm |
| RoHS | Compliant |
No datasheet is available for this part.
