N-channel power MOSFET featuring 650V drain-source breakdown voltage and 30A continuous drain current. Offers a low 0.073 Ohm typical drain-source on-resistance, with a maximum of 95mR. Designed for through-hole mounting in a TO-220 package, this component boasts a maximum power dissipation of 190W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with a 9ns fall time.
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Stmicroelectronics STP38N65M5 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 95mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 95MR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 3nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 95mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 66ns |
| Turn-On Delay Time | 66ns |
| Width | 4.6mm |
| RoHS | Compliant |
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