N-channel PowerMESH™ power MOSFET featuring 1500V drain-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 9 Ohms and a 140W power dissipation. Operating from -50°C to 150°C, it includes a 4V threshold voltage and fast switching times with turn-on delay of 24ns and fall time of 61ns. Packaged in a TO-220 case, this RoHS compliant MOSFET is designed for demanding power applications.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power140W
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Technical Specifications
Stmicroelectronics STP3N150 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 1.5kV |
| Drain to Source Resistance | 9R |
| Drain to Source Voltage (Vdss) | 1.5kV |
| Drain-source On Resistance-Max | 9R |
| Fall Time | 61ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 939pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 9R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 24ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP3N150 Datasheet
Download the complete datasheet for Stmicroelectronics STP3N150 to view detailed technical specifications.
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