N-channel PowerMESH™ power MOSFET featuring 1500V drain-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 9 Ohms and a 140W power dissipation. Operating from -50°C to 150°C, it includes a 4V threshold voltage and fast switching times with turn-on delay of 24ns and fall time of 61ns. Packaged in a TO-220 case, this RoHS compliant MOSFET is designed for demanding power applications.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power140W
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Technical Specifications
Stmicroelectronics STP3N150 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
1.5kV
Drain to Source Resistance
9R
Drain to Source Voltage (Vdss)
1.5kV
Drain-source On Resistance-Max
9R
Fall Time
61ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
939pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-50°C
Max Power Dissipation
140W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
140W
Radiation Hardening
No
Rds On Max
9R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerMESH™
Threshold Voltage
4V
Turn-Off Delay Time
45ns
Turn-On Delay Time
24ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP3N150 Datasheet
Download the complete datasheet for Stmicroelectronics STP3N150 to view detailed technical specifications.
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