The STP3NB60 is a TO-220 packaged N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a continuous drain current of 3.3A and a drain to source breakdown voltage of 600V. The device also features a drain to source resistance of 3.6R and a power dissipation of 80W. The STP3NB60 is RoHS compliant and available in a rail/Tube packaging with 50 units per package.
PackageTO-220
PolarityN-CHANNEL
Power80W
Quick Jump:
Technical Specifications
Stmicroelectronics STP3NB60 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 3.6R |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 80W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP3NB60 Datasheet
Download the complete datasheet for Stmicroelectronics STP3NB60 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.