N-CHANNEL POWER MOSFET, TO-220AB package, featuring 1kV drain-to-source breakdown voltage and 2.5A continuous drain current. This component offers a low 6-ohm drain-to-source resistance (Rds On Max) and a 3.75V threshold voltage. Designed for through-hole mounting, it operates within a -55°C to 150°C temperature range with a maximum power dissipation of 90W. Key switching characteristics include a 15ns turn-on delay and 32ns fall time, with 601pF input capacitance. This RoHS compliant device is supplied in rail/tube packaging.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STP3NK100Z technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
6R
Drain to Source Voltage (Vdss)
1kV
Fall Time
32ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
601pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
6R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
39ns
Turn-On Delay Time
15ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP3NK100Z Datasheet
Download the complete datasheet for Stmicroelectronics STP3NK100Z to view detailed technical specifications.
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