
N-Channel Power MOSFET, TO-220AB package, featuring a 200V drain-source breakdown voltage and a maximum continuous drain current of 40A. Achieves a low 45mΩ drain-source on-resistance. Operates with a 20V gate-source voltage and offers a maximum power dissipation of 160W. Includes fast switching characteristics with a 20ns turn-on delay and 24ns fall time. RoHS compliant and lead-free, suitable for through-hole mounting.
Stmicroelectronics STP40N20 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 45mR |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP40N20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
