N-Channel Power MOSFET, TO-220AB package, featuring a 200V drain-source breakdown voltage and a maximum continuous drain current of 40A. Achieves a low 45mΩ drain-source on-resistance. Operates with a 20V gate-source voltage and offers a maximum power dissipation of 160W. Includes fast switching characteristics with a 20ns turn-on delay and 24ns fall time. RoHS compliant and lead-free, suitable for through-hole mounting.
PackageTO-220AB
Current Rating40A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP40N20 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
40A
Current Rating
40A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
45mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
45mR
Fall Time
24ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.5nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
45mR
RoHS Compliant
Yes
Series
STripFET™
Turn-Off Delay Time
74ns
Turn-On Delay Time
20ns
DC Rated Voltage
200V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP40N20 Datasheet
Download the complete datasheet for Stmicroelectronics STP40N20 to view detailed technical specifications.
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