N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 35A continuous drain current. This through-hole component offers a low 78mΩ maximum drain-source on-resistance and 210W maximum power dissipation. Designed for high-temperature operation up to 150°C, it comes in a TO-220 package and is RoHS compliant. Key electrical characteristics include 3.375nF input capacitance and 79.5ns turn-on/turn-off delay times.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STP45N65M5 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STP45N65M5 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 78mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 78MR |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 3.375nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 210W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Radiation Hardening | No |
| Rds On Max | 78mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 79.5ns |
| Turn-On Delay Time | 79.5ns |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP45N65M5 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
