N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 35A continuous drain current. This through-hole component offers a low 78mΩ maximum drain-source on-resistance and 210W maximum power dissipation. Designed for high-temperature operation up to 150°C, it comes in a TO-220 package and is RoHS compliant. Key electrical characteristics include 3.375nF input capacitance and 79.5ns turn-on/turn-off delay times.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power208W
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Technical Specifications
Stmicroelectronics STP45N65M5 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 78mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 78MR |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 3.375nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 210W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Radiation Hardening | No |
| Rds On Max | 78mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 79.5ns |
| Turn-On Delay Time | 79.5ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP45N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STP45N65M5 to view detailed technical specifications.
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