N-channel Power MOSFET featuring 1500V drain-source breakdown voltage and 4A continuous drain current. This through-hole component offers a typical 5 Ohm drain-source on-resistance, with a maximum of 7 Ohm. Operating within a -55°C to 150°C temperature range, it dissipates up to 160W and includes a 4V threshold voltage. The TO-220 package facilitates easy mounting, and the device is RoHS compliant.
PackageTO-220
Current Rating4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP4N150 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
4A
Current Rating
4A
Drain to Source Breakdown Voltage
1.5kV
Drain to Source Resistance
5R
Drain to Source Voltage (Vdss)
1.5kV
Drain-source On Resistance-Max
7R
Fall Time
45ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
1.3nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
7R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerMESH™
Threshold Voltage
4V
Turn-Off Delay Time
45ns
Turn-On Delay Time
35ns
DC Rated Voltage
1.5kV
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP4N150 Datasheet
Download the complete datasheet for Stmicroelectronics STP4N150 to view detailed technical specifications.
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