N-channel Power MOSFET featuring 525V drain-source breakdown voltage and 2.5A continuous drain current. This SuperMESH3™ device offers a typical 2.1 Ohm drain-source on-resistance, with a maximum of 2.6 Ohm. Housed in a TO-220 package for through-hole mounting, it operates within a -55°C to 150°C temperature range and supports a 30V gate-source voltage. Key switching characteristics include an 8ns turn-on delay and a 14ns fall time.
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Stmicroelectronics STP4N52K3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 525V |
| Drain to Source Resistance | 2.1R |
| Drain to Source Voltage (Vdss) | 525V |
| Drain-source On Resistance-Max | 2.6R |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 334pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Rds On Max | 2.6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
| Width | 4.6mm |
| RoHS | Compliant |
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