N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 3A continuous drain current. This component offers a typical 2.1 Ohm drain-source on-resistance, with a maximum of 2.5 Ohm. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 60W. Key switching characteristics include a 16.5ns turn-on delay and a 21ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STP4N80K5 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STP4N80K5 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 2.1R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 2.5R |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 175pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 2.5R |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 16.5ns |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP4N80K5 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
