N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 3A continuous drain current. This component offers a typical 2.1 Ohm drain-source on-resistance, with a maximum of 2.5 Ohm. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 60W. Key switching characteristics include a 16.5ns turn-on delay and a 21ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STP4N80K5 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 2.1R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 2.5R |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 175pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 2.5R |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 16.5ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP4N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STP4N80K5 to view detailed technical specifications.
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