N-channel power MOSFET featuring 500V drain-source breakdown voltage and 3A continuous drain current. This through-hole component offers a low 2.7 ohm drain-source on-resistance and 20W power dissipation. Key electrical characteristics include a 3.75V nominal gate-source threshold voltage, 310pF input capacitance, and fast switching times with 10ns turn-on delay and 11ns fall time. Packaged in TO-220AB or TO-220FP, it operates from -55°C to 150°C and is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power20W
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Technical Specifications
Stmicroelectronics STP4NK50ZFP technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.7R |
| Drain to Source Voltage (Vdss) | 500V |
| Dual Supply Voltage | 500V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 310pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Nominal Vgs | 3.75V |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Rds On Max | 2.7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Termination | Through Hole |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 10ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP4NK50ZFP Datasheet
Download the complete datasheet for Stmicroelectronics STP4NK50ZFP to view detailed technical specifications.
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