N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 4A continuous drain current. This through-hole component offers a low 1.7 Ohm typical on-state resistance and a maximum power dissipation of 70W. Designed for efficient switching, it exhibits a 12ns turn-on delay and 16.5ns fall time. The MOSFET is housed in a TO-220FP package, operating from -55°C to 150°C, and is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STP4NK60ZFP datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 2R |
| Dual Supply Voltage | 600V |
| Fall Time | 16.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.3mm |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Nominal Vgs | 3.75V |
| Number of Elements | 1 |
| On-State Resistance | 2R |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Termination | Through Hole |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 12ns |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP4NK60ZFP to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
