N-channel power MOSFET featuring 60V drain-source breakdown voltage and 50A continuous drain current. This component offers a low 18mΩ drain-source on-resistance and 110W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates within a -55°C to 175°C temperature range. Key switching characteristics include a 20ns turn-on delay and 36ns turn-off delay.
PackageTO-220
Current Rating50A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STP55NF06 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
50A
Current Rating
50A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
18mR
Dual Supply Voltage
60V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
9.15mm
Input Capacitance
1.3nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Nominal Vgs
3V
Number of Elements
1
On-State Resistance
18mR
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
18mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Threshold Voltage
3V
Turn-Off Delay Time
36ns
Turn-On Delay Time
20ns
DC Rated Voltage
60V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP55NF06 Datasheet
Download the complete datasheet for Stmicroelectronics STP55NF06 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
