N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 42A continuous drain current. Offers a low 63mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, with a maximum power dissipation of 250W. Includes fast switching characteristics with a typical fall time of 19ns and turn-off delay of 12ns. Operates across a wide temperature range from -55°C to 150°C.
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Stmicroelectronics STP57N65M5 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 63mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 63MR |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 63mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 73ns |
| Width | 4.6mm |
| RoHS | Compliant |
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