N-Channel Power MOSFET featuring 525V drain-source breakdown voltage and 4.4A continuous drain current. Offers a low 1.5 ohm drain-source on-resistance and 70W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, with a threshold voltage of 3.75V and fast switching times including a 9ns turn-on delay. Operating temperature range is -55°C to 150°C, and the component is RoHS compliant.
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Stmicroelectronics STP5N52K3 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 525V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 525V |
| Drain-source On Resistance-Max | 1.5R |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 450pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 9ns |
| Width | 4.6mm |
| RoHS | Compliant |
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