N-channel power MOSFET featuring 950V drain-to-source breakdown voltage and 3.5A continuous drain current. Offers a typical 2 Ohm drain-to-source resistance, with a maximum of 2.5 Ohm. Designed for through-hole mounting in a TO-220 package, this component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 70W. Key switching characteristics include a 12ns turn-on delay and 25ns fall time.
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Stmicroelectronics STP5N95K5 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 950V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 950V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 220pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 2.5R |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.01164oz |
| Width | 4.6mm |
| RoHS | Compliant |
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