The STP5NB90 is a 900V N-Channel MOSFET with a continuous drain current of 5A and a power dissipation of 125W. It features a TO-220 package with 3 pins and is available in a rail or tube packaging configuration. The device operates over a temperature range of -65°C to 150°C and has a drain to source breakdown voltage of 900V. The STP5NB90 has a drain to source resistance of 2.3 ohms and a gate to source voltage of 30V. It is not RoHS compliant.
PackageTO-220
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STP5NB90 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 2.3R |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Stmicroelectronics STP5NB90 Datasheet
Download the complete datasheet for Stmicroelectronics STP5NB90 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.