N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 4.5A continuous drain current. Offers a low 1.06 Ohm typical drain-source on-resistance, with a maximum of 1.2 Ohm. Designed for through-hole mounting in a TO-220 package, this component operates within a -55°C to 150°C temperature range and has a maximum power dissipation of 60W. Key switching characteristics include a 9.5ns turn-on delay and 22.5ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STP6N60M2 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.06R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
1.2R
Fall Time
22.5ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
232pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
1.2R
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
24ns
Turn-On Delay Time
9.5ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP6N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STP6N60M2 to view detailed technical specifications.
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