N-channel SuperMESH™ Power MOSFET, 620V drain-source breakdown voltage, 5.5A continuous drain current, and 1.2 Ohm maximum drain-source on-resistance. Features a TO-220 through-hole package with 90W maximum power dissipation. Operates from -55°C to 150°C, with typical 0.95 Ohm on-resistance and 875pF input capacitance. Includes fast switching characteristics with 22ns turn-on delay and 19ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power90W
Quick Jump:
Technical Specifications
Stmicroelectronics STP6N62K3 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
5.5A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
1.28R
Drain to Source Voltage (Vdss)
620V
Drain-source On Resistance-Max
1.2R
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
875pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
49ns
Turn-On Delay Time
22ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP6N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STP6N62K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
