N-channel SuperMESH™ Power MOSFET featuring 900V drain-source breakdown voltage and 5.8A continuous drain current. Offers low 1.56 Ohm typical drain-source on-resistance and 30W power dissipation. Designed for through-hole mounting in a TO-220FP package with a maximum operating temperature of 150°C. Includes fast switching characteristics with 17ns turn-on and 20ns turn-off delay times. RoHS compliant.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.3mm |
| Input Capacitance | 1.35nF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 17ns |
| Width | 4.6mm |
| RoHS | Compliant |
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