The STP70N10F4 is a N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of 100V and a continuous drain current of 65A. The device has a maximum power dissipation of 150W and is packaged in a TO-220 package. The STP70N10F4 is RoHS compliant and lead free.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STP70N10F4 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 65A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 19.5mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 19.5mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP70N10F4 Datasheet
Download the complete datasheet for Stmicroelectronics STP70N10F4 to view detailed technical specifications.
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