N-channel power MOSFET featuring 75V drain-source breakdown voltage and 80A continuous drain current. This STripFET™ II device offers a low 9.5mΩ typical drain-source on-resistance and 11mΩ maximum. Housed in a TO-220 package for through-hole mounting, it supports a maximum power dissipation of 300W and operates from -55°C to 175°C. Key switching characteristics include a 25ns turn-on delay and 30ns fall time.
PackageTO-220
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP75NF75 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Breakdown Voltage
75V
Drain to Source Resistance
9.5mR
Drain to Source Voltage (Vdss)
75V
Drain-source On Resistance-Max
11mR
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
9.15mm
Input Capacitance
3.7nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
11mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Threshold Voltage
3V
Turn-Off Delay Time
66ns
Turn-On Delay Time
25ns
DC Rated Voltage
75V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP75NF75 Datasheet
Download the complete datasheet for Stmicroelectronics STP75NF75 to view detailed technical specifications.
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