N-channel MESH Overlay™ III Power MOSFET in TO-220 package. Features 33V drain-source breakdown voltage and 11mΩ maximum drain-source on-resistance. Delivers 80A continuous drain current with 110W maximum power dissipation. Operates from -55°C to 175°C, with fast switching times including 16ns turn-on delay and 85ns fall time. Through-hole mount, lead-free, and RoHS compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STP75NS04Z technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 33V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 33V |
| Drain-source On Resistance-Max | 11MR |
| Fall Time | 85ns |
| Height | 15.75mm |
| Input Capacitance | 1.86nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | MESH OVERLAY™ III |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 16ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP75NS04Z Datasheet
Download the complete datasheet for Stmicroelectronics STP75NS04Z to view detailed technical specifications.
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