N-channel MESH Overlay™ III Power MOSFET in TO-220 package. Features 33V drain-source breakdown voltage and 11mΩ maximum drain-source on-resistance. Delivers 80A continuous drain current with 110W maximum power dissipation. Operates from -55°C to 175°C, with fast switching times including 16ns turn-on delay and 85ns fall time. Through-hole mount, lead-free, and RoHS compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STP75NS04Z technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
33V
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
33V
Drain-source On Resistance-Max
11MR
Fall Time
85ns
Height
15.75mm
Input Capacitance
1.86nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Rds On Max
11mR
RoHS Compliant
Yes
Series
MESH OVERLAY™ III
Turn-Off Delay Time
53ns
Turn-On Delay Time
16ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP75NS04Z Datasheet
Download the complete datasheet for Stmicroelectronics STP75NS04Z to view detailed technical specifications.
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