N-channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 5A Continuous Drain Current. Features 860mΩ typical Drain-source On-Resistance, with a maximum of 950mΩ. Operates with a 3V Threshold Voltage and a 25V Gate to Source Voltage. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component offers fast switching with turn-on delay of 7.6ns and fall time of 15.9ns. Maximum power dissipation is 60W, with an operating temperature range of -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP7N60M2 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 860mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 950mR |
| Fall Time | 15.9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 271pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 950mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 19.3ns |
| Turn-On Delay Time | 7.6ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP7N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STP7N60M2 to view detailed technical specifications.
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