N-channel enhancement mode power MOSFET with 800V drain-source voltage and 6A continuous drain current. Features SuperMESH process technology, a TO-220AB through-hole package with 3 pins and a tab, and a maximum power dissipation of 110W. Operating temperature range from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STP7N80K5 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.4(Max) |
| Package Width (mm) | 4.6(Max) |
| Package Height (mm) | 9.15(Max) |
| Seated Plane Height (mm) | 19.68(Max) |
| Pin Pitch (mm) | 2.7(Max) |
| Package Weight (g) | 1.9 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SuperMESH |
| Maximum Drain Source Voltage | 800V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 6A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 1200@10VmOhm |
| Typical Gate Charge @ Vgs | 13.4@10VnC |
| Typical Gate Charge @ 10V | 13.4nC |
| Typical Input Capacitance @ Vds | 360@100VpF |
| Maximum Power Dissipation | 110000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Stmicroelectronics STP7N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STP7N80K5 to view detailed technical specifications.
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