N-channel power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. Offers low on-resistance with a maximum of 4.5mΩ at 4.5mR and 300W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, this RoHS compliant component operates from -65°C to 175°C. Key switching characteristics include a 30ns turn-on delay and 95ns fall time.
PackageTO-220
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP80NF03L-04 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
4mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
4.5MR
Fall Time
95ns
Gate to Source Voltage (Vgs)
20V
Height
9.15mm
Input Capacitance
5.5nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
4.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
1V
Turn-Off Delay Time
110ns
Turn-On Delay Time
30ns
DC Rated Voltage
30V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP80NF03L-04 Datasheet
Download the complete datasheet for Stmicroelectronics STP80NF03L-04 to view detailed technical specifications.
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