N-Channel MOSFET, STripFET™ series, features 100V drain-source breakdown voltage and 80A continuous drain current. This through-hole component offers a low 15mΩ maximum drain-source on-resistance and 300W power dissipation. Operating across a wide temperature range from -55°C to 175°C, it boasts a 60ns fall time and 116ns turn-off delay. Packaged in TO-220, this RoHS compliant device has a 3V threshold voltage and 5.5nF input capacitance.
PackageTO-220
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP80NF10 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
15mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
15mR
Fall Time
60ns
Gate to Source Voltage (Vgs)
20V
Height
9.15mm
Input Capacitance
5.5nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
15mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
3V
Turn-Off Delay Time
116ns
Turn-On Delay Time
26ns
DC Rated Voltage
100V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP80NF10 Datasheet
Download the complete datasheet for Stmicroelectronics STP80NF10 to view detailed technical specifications.
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