
N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. This TO-220FP packaged MOSFET offers a low 15mΩ drain-source on-resistance and 45W power dissipation. Optimized for performance with low gate charge, it exhibits a 40ns turn-on delay and 60ns fall time. Operating across a wide temperature range of -55°C to 175°C, this RoHS compliant component is suitable for through-hole mounting.
Stmicroelectronics STP80NF10FP technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 15MR |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.3mm |
| Input Capacitance | 4.3nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 116ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 100V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP80NF10FP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
