N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. This TO-220FP packaged MOSFET offers a low 15mΩ drain-source on-resistance and 45W power dissipation. Optimized for performance with low gate charge, it exhibits a 40ns turn-on delay and 60ns fall time. Operating across a wide temperature range of -55°C to 175°C, this RoHS compliant component is suitable for through-hole mounting.
PackageTO-220-3
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP80NF10FP technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
15mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
15MR
Fall Time
60ns
Gate to Source Voltage (Vgs)
20V
Height
9.3mm
Input Capacitance
4.3nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
15mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
3V
Turn-Off Delay Time
116ns
Turn-On Delay Time
40ns
DC Rated Voltage
100V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP80NF10FP Datasheet
Download the complete datasheet for Stmicroelectronics STP80NF10FP to view detailed technical specifications.
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