N-channel MOSFET featuring 55V drain-source breakdown voltage and a low 6.5mΩ maximum drain-source on-resistance. This component offers a continuous drain current of 80A and a maximum power dissipation of 300W. Packaged in a TO-220 through-hole mount, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 32ns turn-on delay and an 80ns fall time, with an input capacitance of 4.85nF. RoHS compliant and lead-free.
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Stmicroelectronics STP80NF55L-06 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 6.5mR |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 15.75mm |
| Input Capacitance | 4.85nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 6.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 135ns |
| Turn-On Delay Time | 32ns |
| DC Rated Voltage | 55V |
| Width | 4.6mm |
| RoHS | Compliant |
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