P-channel MOSFET, STripFET™ II series, featuring 55V drain-source breakdown voltage and 80A continuous drain current. This power MOSFET offers a low 18mΩ typical drain-source on-resistance and 300W maximum power dissipation. Packaged in a TO-220 through-hole mount, it operates from -55°C to 175°C and includes fast switching characteristics with a 35ns turn-on delay. RoHS compliant and lead-free.
PackageTO-220
Current Rating-80A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Stmicroelectronics STP80PF55 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
80A
Current Rating
-80A
Drain to Source Breakdown Voltage
-55V
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
18mR
Fall Time
80ns
Gate to Source Voltage (Vgs)
16V
Height
9.15mm
Input Capacitance
5.5nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
18mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Threshold Voltage
-3V
Turn-Off Delay Time
165ns
Turn-On Delay Time
35ns
DC Rated Voltage
-55V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP80PF55 Datasheet
Download the complete datasheet for Stmicroelectronics STP80PF55 to view detailed technical specifications.
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