P-channel MOSFET, STripFET™ II series, featuring 55V drain-source breakdown voltage and 80A continuous drain current. This power MOSFET offers a low 18mΩ typical drain-source on-resistance and 300W maximum power dissipation. Packaged in a TO-220 through-hole mount, it operates from -55°C to 175°C and includes fast switching characteristics with a 35ns turn-on delay. RoHS compliant and lead-free.
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Stmicroelectronics STP80PF55 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | -80A |
| Drain to Source Breakdown Voltage | -55V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 18mR |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 9.15mm |
| Input Capacitance | 5.5nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 165ns |
| Turn-On Delay Time | 35ns |
| DC Rated Voltage | -55V |
| Width | 4.6mm |
| RoHS | Compliant |
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