Automotive-grade N-channel power MOSFET featuring 55V drain-source breakdown voltage and 8mΩ maximum drain-source on-resistance. This component offers a continuous drain current of 80A and a maximum power dissipation of 300W. Designed for through-hole mounting in a TO-220 package, it operates across a temperature range of -55°C to 175°C. Key switching characteristics include a 25ns turn-on delay and 35ns fall time. RoHS compliant and lead-free.
Stmicroelectronics STP85NF55 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 55V |
| RoHS | Compliant |
No datasheet is available for this part.
