The STP8NC50FP is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It features a continuous drain current of 8A and a drain to source breakdown voltage of 500V. The device has a drain to source resistance of 850mR and a power dissipation of 40W. It is available in a through-hole package and is RoHS compliant.
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Stmicroelectronics STP8NC50FP technical specifications.
General
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 850mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-On Delay Time | 19ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP8NC50FP Datasheet
Download the complete datasheet for Stmicroelectronics STP8NC50FP to view detailed technical specifications.
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