STP8NM60

N-CHANNEL POWER MOSFET, TO-220AB package, featuring 600V drain-to-source breakdown voltage and 8A continuous drain current. This through-hole component offers a low 1-ohm drain-to-source resistance (Rds On Max) and 100W maximum power dissipation. Key switching characteristics include a 14ns turn-on delay and 10ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant device is designed for high-voltage power applications.