N-CHANNEL POWER MOSFET, TO-220AB package, featuring 600V drain-to-source breakdown voltage and 8A continuous drain current. This through-hole component offers a low 1-ohm drain-to-source resistance (Rds On Max) and 100W maximum power dissipation. Key switching characteristics include a 14ns turn-on delay and 10ns fall time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant device is designed for high-voltage power applications.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STP8NM60 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 650V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP8NM60 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
