N-channel power MOSFET featuring 40V drain-source breakdown voltage and 80A continuous drain current. Offers low 5.4mOhm typical on-resistance (6.2mR max) for efficient power switching. Packaged in a TO-220 through-hole mount, this device boasts a maximum power dissipation of 110W and operates across a wide temperature range of -55°C to 175°C. Includes fast switching characteristics with 15ns turn-on and 15ns fall times.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STP95N4F3 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 6.2mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.75mm |
| Input Capacitance | 2.2nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 6.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ III |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 15ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP95N4F3 Datasheet
Download the complete datasheet for Stmicroelectronics STP95N4F3 to view detailed technical specifications.
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