N-channel Power MOSFET featuring 600V drain-source voltage and 5.5A continuous drain current. Offers 780mΩ maximum drain-source on-resistance and 650V breakdown voltage. Designed for through-hole mounting in a TO-220 package, this component boasts fast switching characteristics with a 13.5ns fall time and 22ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 60W.
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Stmicroelectronics STP9N60M2 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 780mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 780mR |
| Fall Time | 13.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 320pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 780mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 8.8ns |
| Width | 4.6mm |
| RoHS | Compliant |
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