N-channel Power MOSFET featuring 600V drain-source voltage and 5.5A continuous drain current. Offers 780mΩ maximum drain-source on-resistance and 650V breakdown voltage. Designed for through-hole mounting in a TO-220 package, this component boasts fast switching characteristics with a 13.5ns fall time and 22ns turn-off delay. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 60W.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STP9N60M2 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
5.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
780mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
780mR
Fall Time
13.5ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
320pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
780mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
22ns
Turn-On Delay Time
8.8ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP9N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STP9N60M2 to view detailed technical specifications.
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