N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 7.2A continuous drain current. Offers 850mΩ maximum drain-source on-resistance and 110W power dissipation. Designed with Zener protection and a SuperMESH™ series, this component is housed in a TO-220 package for through-hole mounting. Key electrical characteristics include a 3.75V threshold voltage and fast switching times with turn-on delay of 17ns and fall time of 22ns. RoHS compliant and operates within a -55°C to 150°C temperature range.
PackageTO-220
Current Rating7.2A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STP9NK50Z technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
7.2A
Current Rating
7.2A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
850mR
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
Height
9.15mm
Input Capacitance
910pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
850mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
45ns
Turn-On Delay Time
17ns
DC Rated Voltage
500V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP9NK50Z Datasheet
Download the complete datasheet for Stmicroelectronics STP9NK50Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
