N-channel SuperMESH™ Power MOSFET featuring 650V drain-source breakdown voltage and 1.2 Ohm Rds(on). This through-hole component offers a continuous drain current of 6.4A and a maximum power dissipation of 125W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and includes Zener protection. The TO-220 package facilitates easy mounting, with typical turn-on delay of 20ns and turn-off delay of 45ns.
PackageTO-220
Current Rating6.4A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STP9NK65Z technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 6.4A |
| Current Rating | 6.4A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.145nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 650V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP9NK65Z Datasheet
Download the complete datasheet for Stmicroelectronics STP9NK65Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
