N-channel SuperMESH™ Power MOSFET featuring 650V drain-source breakdown voltage and 1.2 Ohm Rds(on). This through-hole component offers a continuous drain current of 6.4A and a maximum power dissipation of 125W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and includes Zener protection. The TO-220 package facilitates easy mounting, with typical turn-on delay of 20ns and turn-off delay of 45ns.
PackageTO-220
Current Rating6.4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP9NK65Z technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
6.4A
Current Rating
6.4A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
650V
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.145nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
1.2R
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
45ns
Turn-On Delay Time
20ns
DC Rated Voltage
650V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP9NK65Z Datasheet
Download the complete datasheet for Stmicroelectronics STP9NK65Z to view detailed technical specifications.
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