N-channel SuperMESH™ Power MOSFET featuring 900V drain-source breakdown voltage and 8A continuous drain current. This through-hole component offers a low 1.1 Ohm typical drain-source on-resistance and 160W maximum power dissipation. Housed in a TO-220 package, it operates from -55°C to 150°C with a 30V gate-source voltage rating. Key switching characteristics include a 28ns fall time, 55ns turn-off delay, and 22ns turn-on delay.
PackageTO-220
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP9NK90Z technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
1.3R
Drain to Source Voltage (Vdss)
900V
Drain-source On Resistance-Max
1.3R
Fall Time
28ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
2.115nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
1.3R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
55ns
Turn-On Delay Time
22ns
DC Rated Voltage
900V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP9NK90Z Datasheet
Download the complete datasheet for Stmicroelectronics STP9NK90Z to view detailed technical specifications.
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