The STQ2N62K3-AP is a TO-92 packaged N-channel MOSFET with a maximum operating temperature of 150°C. It has a continuous drain current of 2.2A and a drain to source breakdown voltage of 620V. The device features a drain to source resistance of 3.5 ohms and a gate to source voltage of 30V. It is designed for lead-free applications and has a power dissipation of 3W. The STQ2N62K3-AP has a turn-off delay time of 21ns and a turn-on delay time of 8ns. It is suitable for through-hole mounting.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power3W
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Technical Specifications
Stmicroelectronics STQ2N62K3-AP technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 620V |
| Drain to Source Resistance | 3.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Mount | Through Hole |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STQ2N62K3-AP Datasheet
Download the complete datasheet for Stmicroelectronics STQ2N62K3-AP to view detailed technical specifications.
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