The STQ2N62K3-AP is a TO-92 packaged N-channel MOSFET with a maximum operating temperature of 150°C. It has a continuous drain current of 2.2A and a drain to source breakdown voltage of 620V. The device features a drain to source resistance of 3.5 ohms and a gate to source voltage of 30V. It is designed for lead-free applications and has a power dissipation of 3W. The STQ2N62K3-AP has a turn-off delay time of 21ns and a turn-on delay time of 8ns. It is suitable for through-hole mounting.
Sign in to ask questions about the Stmicroelectronics STQ2N62K3-AP datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STQ2N62K3-AP technical specifications.
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 620V |
| Drain to Source Resistance | 3.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Mount | Through Hole |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STQ2N62K3-AP to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
