N-channel SuperMESH3™ Power MOSFET featuring 450V drain-to-source breakdown voltage and 600mA continuous drain current. This through-hole component offers a 3.2 Ohm drain-to-source resistance at a 450V Vdss rating. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. The TO-92 package facilitates easy integration into existing circuit designs.
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Stmicroelectronics STQ3N45K3-AP technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Breakdown Voltage | 450V |
| Drain to Source Resistance | 3.2R |
| Drain to Source Voltage (Vdss) | 450V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.95mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 3.8R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Threshold Voltage | 3.75V |
| Width | 3.94mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STQ3N45K3-AP Datasheet
Download the complete datasheet for Stmicroelectronics STQ3N45K3-AP to view detailed technical specifications.
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