N-channel power MOSFET designed for efficient switching applications. Features a low on-resistance of 30mΩ (typ. 25mΩ) and a drain-source breakdown voltage of 20V. Delivers a continuous drain current of 2.3A and operates with a gate-source voltage up to 8V. Housed in a compact SOT-23 surface-mount package, this component offers a maximum power dissipation of 350mW and is RoHS compliant.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Stmicroelectronics STR2N2VH5 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
2.3A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
30mR
Gate to Source Voltage (Vgs)
8V
Height
1.3mm
Input Capacitance
367pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
350mW
Radiation Hardening
No
Rds On Max
30mR
RoHS Compliant
Yes
Series
STripFET™ V
Width
1.75mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STR2N2VH5 Datasheet
Download the complete datasheet for Stmicroelectronics STR2N2VH5 to view detailed technical specifications.
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