N-channel power MOSFET designed for efficient switching applications. Features a low on-resistance of 30mΩ (typ. 25mΩ) and a drain-source breakdown voltage of 20V. Delivers a continuous drain current of 2.3A and operates with a gate-source voltage up to 8V. Housed in a compact SOT-23 surface-mount package, this component offers a maximum power dissipation of 350mW and is RoHS compliant.
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Stmicroelectronics STR2N2VH5 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 30mR |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.3mm |
| Input Capacitance | 367pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| RoHS Compliant | Yes |
| Series | STripFET™ V |
| Width | 1.75mm |
| RoHS | Compliant |
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