Dual N-channel power MOSFET featuring 30V drain-source breakdown voltage and 10A continuous drain current. Offers a low 21mΩ maximum drain-source on-resistance. This surface-mount SO-8 package component boasts fast switching speeds with a 4ns turn-on delay and 2.8ns fall time. Operates across a wide temperature range from -55°C to 150°C with 2.5W power dissipation.
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Stmicroelectronics STS10DN3LH5 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 21mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 21MR |
| Fall Time | 2.8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 22V |
| Input Capacitance | 475pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 21mR |
| RoHS Compliant | Yes |
| Series | STripFET™ V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 4ns |
| RoHS | Compliant |
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