Dual N-Channel Power MOSFET, 450V Drain-Source Breakdown Voltage, 500mA Continuous Drain Current, and 3.8 Ohm Max Drain-Source On-Resistance. Features a 3.75V Threshold Voltage and 150pF Input Capacitance. Surface mountable in an SOIC package, this RoHS compliant component operates from -55°C to 150°C with a max power dissipation of 1.7W.
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Stmicroelectronics STS1DN45K3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Breakdown Voltage | 450V |
| Drain to Source Resistance | 3.8R |
| Drain to Source Voltage (Vdss) | 450V |
| Drain-source On Resistance-Max | 3.8R |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.7W |
| Radiation Hardening | No |
| Rds On Max | 3.8R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Threshold Voltage | 3.75V |
| RoHS | Compliant |
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