Dual N-Channel SuperMESH™ Power MOSFET, 450V Drain to Source Breakdown Voltage, 4.1 Ohm Drain to Source Resistance, 400mA Continuous Drain Current. Features 160pF Input Capacitance, 6.7ns Turn-On Delay Time, and 4ns Fall Time. Packaged in SO-8 for surface mounting, this lead-free and RoHS compliant component offers a maximum power dissipation of 2W.
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Stmicroelectronics STS1DNC45 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 400mA |
| Current Rating | 400mA |
| Drain to Source Breakdown Voltage | 450V |
| Drain to Source Resistance | 4.1R |
| Drain to Source Voltage (Vdss) | 450V |
| Fall Time | 4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 160pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 4.5R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-On Delay Time | 6.7ns |
| DC Rated Voltage | 450V |
| RoHS | Compliant |
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