Dual N-Channel SuperMESH™ Power MOSFET, 450V Drain to Source Breakdown Voltage, 4.1 Ohm Drain to Source Resistance, 400mA Continuous Drain Current. Features 160pF Input Capacitance, 6.7ns Turn-On Delay Time, and 4ns Fall Time. Packaged in SO-8 for surface mounting, this lead-free and RoHS compliant component offers a maximum power dissipation of 2W.
PackageSO
Current Rating400mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STS1DNC45 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
400mA
Current Rating
400mA
Drain to Source Breakdown Voltage
450V
Drain to Source Resistance
4.1R
Drain to Source Voltage (Vdss)
450V
Fall Time
4ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
30V
Input Capacitance
160pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
4.5R
RoHS Compliant
Yes
Series
SuperMESH™
Turn-On Delay Time
6.7ns
DC Rated Voltage
450V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STS1DNC45 Datasheet
Download the complete datasheet for Stmicroelectronics STS1DNC45 to view detailed technical specifications.
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